journal article·2020-11-24Open access

Flexible Ultraviolet Photodetectors Based on One-Dimensional Gallium-Doped Zinc Oxide Nanostructures

Sheng-Joue Young, Yi-Hsing Liu, M. D. Nahin Islam Shiblee, Kumkum Ahmed, Lin-Tzu Lai, Larry Nagahara, Thomas Thundat, Tsukasa Yoshida, Sandeep Arya, Hidemitsu Furukawa, Ajit Khosla

ACS Applied Electronic Materials· Volume 2· Issue 11

Abstract

Wide band gap semiconductors such as ZnO are characterized by unique optoelectronic properties, which have led to numerous applications in the field of sensors and optoelectronics. These components are commonly fabricated on rigid substrates. However, the same synthesis method cannot be used to fabricate these components on flexible substrates. In this work, we present a method to fabricate metal–semiconductor–metal ultraviolet photodetectors with ZnO nanorods on flexible substrates. It is observed that the overall characteristics of the fabricated ZnO nanorod photodetector are greatly enhanced by doping with gallium (Ga). The nanorods are grown on a flexible substrate (poly(ethylene 2,6-naphthalate)) at a low temperature of 80 °C. The performance of Ga-doped ZnO nanorods (GZO) shows a significant improvement in electrical measurements compared to pure ZnO nanorods. The photocurrent-to-dark current ratios of both ZnO and GZO nanorod-based photodetectors are approximately 8.5 and 570.2 under a 1 V bias, respectively. The dark current and photocurrent are substantially improved by the addition of the Ga dopant. Transient response measurements indicated that the GZO nanorod photodetectors are stable and reproducible, and no change in the current–voltage characteristics is noted after multiple bending cycles. These results indicate that Ga-doping can improve the ZnO nanorod optical and electric characteristics; this proposed method is useful for device fabrication on low-melting-point substrates to produce flexible cost-effective devices.
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Research context

OpenAlex topics: ZnO doping and properties · Ga2O3 and related materials · Gas Sensing Nanomaterials and Sensors

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Electronic Engineering, National United University, Miaoli 36003, Taiwan

Institute of Microelectronics, Department of Electrical Engineering, Advanced Optoelectronic Technology Center, Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 70101, Taiwan

Department of Mechanical Systems Engineering, Graduate School of Science and Engineering, Yamagata University, Yonezawa, Yamagata 992-8510, Japan

College of Engineering, Shibaura Institute of Technology, 3 Chome-7-5 Toyosu, Koto City, Tokyo 135-8548, Japan

Department of Chemical and Biomolecular Engineering, Whiting School of Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, Maryland 21218, United States

Department of Chemical and Biological Engineering, University at Buffalo, The State University of New York, Amherst, New York 14260-4200, United States

Department of Chemistry and Chemical Engineering, Graduate School of Science and Engineering, Yamagata University, Yonezawa, Yamagata 992-8510, Japan

Department of Physics, University of Jammu, Jammu, Jammu and Kashmir 180006, India

Funding

New Energy and Industrial Technology Development Organization · Japan Society for the Promotion of Science · Japan Science and Technology Agency · Cabinet Office, Government of Japan · Ministry of Science and Technology, Taiwan

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