Preparation of Molybdenum-doped Indium Oxide Thin Films Using Reactive Direct-current Magnetron Sputtering

High-mobility molybdenum-doped In₂O₃ films (IMO) were prepared on the normal glass substrate by reactive direct current magnetron sputtering from the molybdenum-embedded indium metal target. The effects of oxygen partial pressure, substrate temperature, and sputtering current on the optoelectrical properties of IMO films were investigated. The films with the highest carrier mobility of 50 cm² V⁻¹ s⁻¹, as well as the average visible transmission greater than 80% including the 1.2-mm-thick glass substrate, were obtained. The minimum resistivity of the films is 3.7 × 10⁻⁴ ohm cm. The properties of the IMO films are sensitive to the oxygen partial pressure in the sputtering environment. X-ray diffraction measurements indicate that the films show In₂O₃ crystal structure.