A sensitive photodetector: Tuning the electronic structure of the Cu2O/MoS2 heterojunction by controlling the interlayer spacing or electric field
Source abstract
Abstract
It is a significant challenge to enhance the band alignment sensitivity of MoS2-based optoelectronic devices by constructing semiconductor heterojunction. To solve the problem, we incorporate Cu2O into MoS2to enhance the tunability of electronic structures for the first time by controlling interlayer spacings or electric field (Efield) using first-principles calculations. A stable van der Waals heterojunction forms between Cu2O and MoS2based on the negative interfacial cohesive energy and the excellent lattice match. Noteworthily, the bandgap of Cu2O/MoS2heterojunction varies about 0.2–0.3 eV with a 0.1 V/Å increase ofEfield, which is more sensitive than that of pure MoS2. It is confirmed that the inhomogeneous charge redistribution of heterojunction enhances the tunability of electronic structures. Additionally, the detection wavelength of heterojunction expands from visible to infrared spectrum withEfield. These findings motivate more theoretical and experimental work to further study photodetectors with high sensitivity and low power consumption.Graphical abstract
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: ZnO doping and properties · Copper-based nanomaterials and applications · 2D Materials and Applications
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References (51)
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