Effect of underlying boron nitride thickness on photocurrent response in molybdenum disulfide - boron nitride heterostructures

Here we report on the photocurrent response of two-dimensional (2D) heterostructures of sputtered MoS2on boron nitride (BN) deposited on (001)-oriented Si substrates. The steady state photocurrent (Iph) measurements used a continuous laser of λ = 658 nm (E= 1.88 eV) over a broad range of laser intensities,P(∼1 µW 1) in both the samples. The responsivities obtained over the range of laser intensity studied were in the order of mA/W (∼12 and ∼2.7 mA/W with 80 nm BN and 30 nm BN under layers, respectively). These investigations provide crucial insight into the optical activity of MoS2on BN, which could be useful for developing a variety of optoelectronic applications with MoS2or other 2D transition metal dichalcogenide heterostructures.