Transparent Conductive In-doped Cd₃TeO₆ Thin Films with Perovskite Structure Deposited by Radio Frequency Magnetron Sputtering

Transparent conductive In-doped Cd₃TeO₆ thin films were deposited on silica glass substrate by radio frequency magnetron sputtering using targets composed of CdO, TeO₂, and In₂O₃ powders, and their electrical and optical properties were examined. The electrical resistivity of 3.2 × 10⁻³ Ωcm and an average transmittance above 80% in the visible region (400–800 nm) were obtained for the films deposited at the substrate temperature above 300 °C. The maximum optical band gap was 3.92 eV for the film deposited at 700 °C, demonstrating a large optical band gap comparable to indium tin oxide.