Mechanical property and dislocation dynamics of GaAsP alloy semiconductor
Source abstract
Abstract
The mechanical behavior of GaAsP alloy semiconductor was investigated by means of compressive deformation and compared with those of GaAs and GaP. The nature of collective motion of dislocations during deformation was determined by strain-rate cycling tests. The dynamic characteristics of dislocations in GaAsP were found to be similar to those in elemental and compound semiconductors such as Si, Ge, GaAs, and GaP. An alloy semiconductor has a component of the flow stress that is temperature-insensitive and is absent in compound semiconductors.
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Research context
OpenAlex topics: Advanced Materials Characterization Techniques · Microstructure and mechanical properties · Semiconductor materials and interfaces
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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