Properties of Indium Molybdenum Oxide Films Fabricated Via High-Density Plasma Evaporation at Room Temperature

The goal of this study was to determine the scattering mechanisms and investigate the optoelectronic properties of indium molybdenum oxide (IMO) films. IMO films were deposited from an In₂O₃/MoO₃ target with a weight ratio of 99/1, 95/5 and 90/10 via high-density plasma evaporation at room temperature. Based on the structural, electrical and optical properties, this study proposed that the neutral complex [(2Mo^‧_In)O^{_i}_″]^x dominated at high doping content and high oxygen content, whereas ionized complex Mo^‧‧‧_In O^{_i}_″]^‧ dominated at low doping level or low oxygen content. Uniform 99/1 IMO films with minimum resistivity of 3.56 × 10⁻⁴ Ω cm (corresponding to a mobility of 14.6 cm²V⁻¹s⁻¹ and carrier concentration of 14.3 × 10²⁰ cm⁻³) and average visible transmittance of ∼85% were produced at an optimum oxygen content of ∼9%. Average optical transmittance exceeding 80% was demonstrated, and a structural change appeared at low oxygen contents.