Novel p-type oxides with corundum structure for gallium oxide electronics
Source abstract
Abstract
P-type ultra-wide bandgap materials have been desired for gallium oxide electronics. We show that the self-trapped exciton (STE) inα-Ga2O3is a stable state relative to the free exciton from analysis of Urbach tails in absorption spectra. The stable STE formation indicates strong localization of holes, which suggests thatα-Ga2O3is disadvantageous as a p-type semiconductor. Instead of doping methods, using p-type material that have the same crystal structure as Ga2O3is effective. An alloy thin film ofα-(Rh,Ga)2O3showed clear p-type conductivity with the large positive Hall coefficient. Theα-Ir2O3thin films also showed p-type conductivities. The origin of p-type conductivity is attributed to that 5d orbitals of Ir which consists the top of the valence band ofα-Ir2O3, being located at the upper energy level compared to 2p orbitals of oxygen atoms.Graphical abstract
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Advanced Photocatalysis Techniques
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (60)
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