A review of molecular-beam epitaxy of wide bandgap complex oxide semiconductors
Source abstract
Abstract
Much progress has been made in the area of wide bandgap semiconductors for applications in electronics and optoelectronics such as displays, power electronics, and solar cells. New materials are being sought after and considerable attention has been given to complex oxides, specifically those with the perovskite crystal structure. Molecular-beam epitaxy (MBE) has come to the forefront of this field for the thin film synthesis of these materials in a high-quality manner and achieves some of their best figures of merit. Here, we discuss the development of MBE from its beginnings as a method for III–V semiconductor growth to today for the growth of many contenders for next-generation electronics. Comparing MBE with other physical vapor deposition techniques, we identify the advantages of MBE as well as many of the challenges that still must be overcome should this technique be applied to other up-and-coming wide bandgap complex oxide semiconductors.
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Research context
OpenAlex topics: Electronic and Structural Properties of Oxides · Semiconductor materials and devices · ZnO doping and properties
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References (100+)
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