journal article·2026

Achieving ultra-low contact resistivity and boosting the performance of P-type SnO-TFTs with metal–TMO interlayer–semiconductor contact using transition metal oxides

Jongyoun Park, Sungjoo Song, Seung Hwan Kim, Jeong-Kyu Kim, Tae-Hang Ahn, Hyun-Yong Yu

Publisher page

Abstract

A metal–TMO interlayer–semiconductor (MTIS) contact using a sputtered MoO X interlayer achieves ultra-low contact resistivity, significantly boosting the performance of p-type SnO TFTs.
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Research context

OpenAlex topics: Thin-Film Transistor Technologies · ZnO doping and properties · Transition Metal Oxide Nanomaterials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Electrical Engineering, Korea University, Korea University, Seoul 02841, Korea

Department of Semiconductor Systems Engineering, Korea University, Seoul 02841, Korea

Department of Electronics and Computer Engineering, Chonnam National University, 77 YongBong-Ro, Buk-gu, Gwangju, 61186, Korea

Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA

Department of Semiconductor Engineering, Korea University, Seoul 02841, Korea

Funding

National Research Foundation of Korea · Ministry of Science and ICT, South Korea

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