Achieving ultra-low contact resistivity and boosting the performance of P-type SnO-TFTs with metal–TMO interlayer–semiconductor contact using transition metal oxides
Abstract
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Research context
OpenAlex topics: Thin-Film Transistor Technologies · ZnO doping and properties · Transition Metal Oxide Nanomaterials
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Affiliations
Department of Electrical Engineering, Korea University, Korea University, Seoul 02841, Korea
Department of Semiconductor Systems Engineering, Korea University, Seoul 02841, Korea
Department of Electronics and Computer Engineering, Chonnam National University, 77 YongBong-Ro, Buk-gu, Gwangju, 61186, Korea
Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA
Department of Semiconductor Engineering, Korea University, Seoul 02841, Korea
Funding
National Research Foundation of Korea · Ministry of Science and ICT, South Korea