Enhancement of the Thermal Stability in a-IGZO S/D Contacts by ZnO-based post-interlayer deposition annealing (PIDA) MIS structures
Source abstract
Abstract
Amorphous indium gallium zinc oxide (a-IGZO) field-effect transistors (FETs) are promising for back-end-of-line (BEOL) integration, yet their source/drain (S/D) contacts suffer from severe thermal degradation during high-temperature processing. To overcome...
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Thin-Film Transistor Technologies · Semiconductor materials and interfaces · Silicon Carbide Semiconductor Technologies
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