Transconductance signature profiling of localized conduction pathways in parallelized oxide semiconductor TFTs
Source abstract
Abstract
Transconductance signature profiling resolves geometry-dependent parasitic conduction in parallelized oxide TFTs. Unit-width partitioning lowers the parasitic path formation probability for robust high-current oxide semiconductor layouts.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: Thin-Film Transistor Technologies · Advancements in Semiconductor Devices and Circuit Design · CCD and CMOS Imaging Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea
Department of Semiconductor Convergence Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea
The Research and Development Center, Samsung Display Company, Yongin, 17113, Republic of Korea
Process Development Team, Samsung Display Company, Yongin, 17113, Republic of Korea
Funding
Ministry of Science and ICT, South Korea · IC Design Education Center · Samsung Display
References (39)
Show source-provided references
1. Park · Sci. Rep. · 2023 · 13 · 1759010.1038/s41598-023-44684-5 ↗
2. D.Ha , Y.Lee , S.Yoo et al. , in IEEE International Memory Workshop (IMW), Seoul, Korea, 2024, pp. 1–4
3. Saito · IEEE Trans. Electron Devices · 2020 · 67 · 461610.1109/TED.2020.3025986 ↗
4. J.Liu , C.Sun , W.Tang et al. , in International Electron Devices Meeting (IEDM), San Francisco, CA, 2021, pp. 21.1.1–21.1.4
5. Won · Adv. Sci. · 2023 · 10 · 230301810.1002/advs.202303018 ↗
6. W.Tang , C.Chen , J.Liu et al. , in IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2023, pp. 1–4
7. Oh · Appl. Phys. Lett. · 2016 · 108 · 14160410.1063/1.4945404 ↗
8. Jang · ACS Appl. Mater. Interfaces · 2022 · 14 · 138910.1021/acsami.1c18890 ↗
9. Kang · IEEE Electron Device Lett. · 2011 · 32 · 138510.1109/LED.2011.2161568 ↗
10. Pan · Trans. Electr. Electron. Mater. · 2024 · 25 · 37110.1007/s42341-024-00536-1 ↗
11. Zhou · Micromachines · 2025 · 16 · 132510.3390/mi16121325 ↗
12. Shim · Sci. Rep. · 2026 · 16 · 1622810.1038/s41598-026-48039-8 ↗
13. Kim · J. Soc. Inf. Disp. · 2019 · 27 · 51410.1002/jsid.827 ↗
14. Shin · SID Symp. Dig. Tech. Pap. · 2018 · 49 · 35810.1002/sdtp.12571 ↗
15. Chen · IEEE Trans. Electron Devices · 2020 · 67 · 492910.1109/TED.2020.3023069 ↗
16. Kim · IEEE Trans. Electron Devices · 2018 · 65 · 326910.1109/TED.2018.2843180 ↗
17. Lin · IEEE Electron Device Lett. · 2012 · 33 · 67910.1109/LED.2012.2188269 ↗
18. Noh · SID Symp. Dig. Tech. Pap. · 2017 · 48 · 28810.1002/sdtp.11605 ↗
19. Liu · Appl. Phys. Lett. · 2014 · 104 · 13350310.1063/1.4868430 ↗
20. Choi · Appl. Phys. Lett. · 2012 · 100 · 04350310.1063/1.3679109 ↗
21. Ishimaru · IEEE Trans. Electron Devices · 1999 · 46 · 153210.1109/16.772507 ↗
22. Kim · IEEE Electron Device Lett. · 2023 · 44 · 165210.1109/LED.2023.3306287 ↗
23. Park · Adv. Electron. Mater. · 2025 · e00852
24. Ishizu · IEEE Solid-State Circuits Lett. · 2019 · 2 · 29310.1109/LSSC.2019.2952895 ↗
25. T.Ohmaru , T.Nakagawa , S.Maeda , Y.Okamoto , M.Kozuma and S.Yoneda , in International Solid-State Circuits Conference (ISSCC), San Francisco, CA, 2015
26. Han · Micromachines · 2025 · 16 · 11810.3390/mi16020118 ↗
27. M.Kang , M.Um , J.Won et al. , in IEEE Custom Integrated Circuits Conference (CICC), San Antonio, TX, 2024, pp. 1–2
28. Wong · Solid-State Electron. · 1987 · 30 · 95310.1016/0038-1101(87)90132-8 ↗
29. Colinge · Solid-State Electron. · 2004 · 48 · 89710.1016/j.sse.2003.12.020 ↗
30. Choi · IEEE Electron Device Lett. · 2013 · 34 · 77110.1109/LED.2013.2256457 ↗
31. Park · Adv. Electron. Mater. · 2023 · 9 · 220110910.1002/aelm.202201109 ↗
32. Deen · IEEE Trans. Electron Devices · 1991 · 38 · 181510.1109/16.119020 ↗
33. J.Lee , I. C.Chen and C.Hu , in Proceedings on Reliability Physics Symposium, 1988, pp. 131–138
34. Degraeve · Microelectron. Reliab. · 1996 · 36 · 163910.1016/0026-2714(96)00163-1 ↗
35. Ernest · Semicond. Sci. Technol. · 2000 · 15 · 42510.1088/0268-1242/15/5/301 ↗
36. M. A.Alam , R. K.Smith , B. E.Weir and P. J.Silverman , in International Electron Devices Meeting (IEDM), 2002, pp. 151–154
37. Alam · Nature · 2002 · 420 · 37810.1038/420378a ↗
38. Altham · J. R. Stat. Soc. Ser. C · 1978 · 27 · 162
39. A.Papoulis , Random Variables and Stochastic Processes , McGraw-Hill , New York , 1965