Growth-stage Zn doping reduces Schottky barriers and enhances the optoelectronic performance of 2D InSe
Abstract
Research context
OpenAlex topics: 2D Materials and Applications · Chalcogenide Semiconductor Thin Films · Semiconductor Quantum Structures and Devices
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Affiliations
State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an, 710072, P. R. China
Key Laboratory of Radiation Detection Materials and Devices, Ministry of Industry and Information Technology, Xi’an, 710072, P. R. China
Research & Development Institute of Northwestern Polytechnical University in Shenzhen, Shenzhen, 518063, P. R. China
Imdetek Corp. Ltd, Xi’an, 610000, P. R. China
Chongqing Jianan Instruments Co., Ltd, Chongqing, 400060, P. R. China
Digital Publishing Department, Shaanxi Science and Technology Press, Xi’ an, 710061, P. R. China
al-Farabi Kazakh National University, Al-Farabi av. 71/23, Almaty 050040, Kazakhstan
Funding
National Natural Science Foundation of China · National Key Research and Development Program of China · Fundamental Research Funds for the Central Universities · State Key Laboratory of Solidification Processing