Enhanced switching characteristics in amorphous IGZO FETs via an HfO 2 -induced quasi-two-dimensional electron channel
Abstract
Research context
OpenAlex topics: Thin-Film Transistor Technologies · Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design
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Affiliations
Department of Advanced Materials Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk, 28644, Republic of Korea
Department of Urban, Energy, and Environmental Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk, 28644, Republic of Korea
Department of Electronic & Information Engineering, Korea University, Sejong-ro 2511, Jochiwon-eup, Sejong, Chungbuk, 30019, Republic of Korea
Intelligent Semiconductor Materials Research Center, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-gu, Changwon, Gyeongnam, 51508, Republic of Korea
Advanced Energy Research Institute, Chungbuk National University, Cheongju, Chungbuk, 28644, Republic of Korea
Biomedical Research Institute, Chungbuk National University Hospital, 766, 1 Sunhwan-ro, Seowon-gu, Cheongju, Chungbuk, 28644, Republic of Korea
Funding
Ministry of Trade, Industry and Energy · Ministry of Education · Ministry of Science and ICT, South Korea