Resolving the contact–channel trade-off in p-type SnO thin-film transistors via self-aligned fluorine plasma treatment
Source abstract
Abstract
Self-aligned fluorine plasma process enables breaking the contact–leakage current trade-off in p-type SnO TFTs by thinning and fluorine-doping the back-channel while preserving low-resistance contacts.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: Thin-Film Transistor Technologies · Ga2O3 and related materials · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Chemistry and Chemical Engineering, Inha University, Incheon, 22212, Republic of Korea
Program in Semiconductor Convergence, Inha University, Incheon, 22212, Republic of Korea
Division of Advanced Materials, Korea Research Institute of Chemical Technology, Daejeon, South Korea
Funding
Ministry of Trade, Industry and Energy · Ministry of Education
References (37)
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