Interfacial engineering of nitrogen-doped silicon carbide for reliable hybrid bonding in advanced semiconductor integration
Source abstract
Abstract
This review summarizes engineering strategies for SiCN dielectric films in hybrid bonding interconnects, covering fabrication methods, bonding mechanisms, and the structure–property relationships that determine bonding performance.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: 3D IC and TSV technologies · Copper Interconnects and Reliability · Electronic Packaging and Soldering Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Key Laboratory of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences, Beijing, 100029, China
Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing, 100049, China
Funding
National Natural Science Foundation of China
References (100+)
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