Sequential quenching to predict semiconductor defect concentrations from formation & migration energies: the case of CdTe:As doping
Source abstract
Abstract
Defects freeze at different temperatures during cooldown, producing non-equilibrium semiconductor states beyond equilibrium and full-quench predictions.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: Advanced Semiconductor Detectors and Materials · Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah, 84112, USA
Department of Materials Science and Engineering, University of Delaware, Newark, Delaware, 19716, USA
Department of Electrical and Computer Engineering, University of Utah, Salt Lake City, Utah, 84112, USA
Funding
U.S. Department of Energy · Office of Energy Efficiency and Renewable Energy · Solar Energy Technologies Office · National Energy Research Scientific Computing Center
References (70)
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