Low off-state current density in vertical organic field-effect transistors via AgNWs/TiO 2 interface modification for neuromorphic devices
Source abstract
Abstract
Low off-state current density, high on/off ratio and output saturation performance were achieved in VOFET, and low-power optoelectronic neuromorphic devices with distinct conductance states and high recognition accuracy were further demonstrated.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Organic Electronics and Photovoltaics · Neural Networks and Reservoir Computing
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Engineering, Key Laboratory of Agricultural Sensors, Ministry of Agriculture and Rural Affairs, Anhui Agricultural University, Hefei 230036, China
Fujian Provincial Key Laboratory of Functional Materials and Applications, Xiamen University of Technology, Xiamen 361024, China
School of Electronics and Information, Zhengzhou University of Light Industry, Zhengzhou 450002, China
State Key Laboratory of Advanced Materials for Intelligent Sensing, Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China
Funding
National Natural Science Foundation of China · Natural Science Foundation of Anhui Province · Henan Provincial Science and Technology Research Project · China Postdoctoral Science Foundation
References (53)
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