Radiation-hard organic electronics via perylenediimide core engineering

Sergey A. Kuklin; Petr M. Kuznetsov; Valeria S. Bolshakova; Gennady V. Shilov; Alexander V. Mumyatov; Mikhail V. Zhidkov; Galina A. Kichigina; Pavel P. Kushch; Evgeny V. Golosov; Dmitry P. Kiryukhin; Pavel A. Troshin

doi:10.1039/d5tc04384k

journal article·2026

Radiation-hard organic electronics via perylenediimide core engineering

Sergey A. Kuklin, Petr M. Kuznetsov, Valeria S. Bolshakova, Gennady V. Shilov, Alexander V. Mumyatov, Mikhail V. Zhidkov, Galina A. Kichigina, Pavel P. Kushch, Evgeny V. Golosov, Dmitry P. Kiryukhin, Pavel A. Troshin

Journal of Materials Chemistry C· Volume 14· Issue 24

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Source abstract

Abstract

This first systematic study of gamma ray exposure on perylenediimide (PDI) semiconductors reveals their outstanding radiation hardness, unlocking potential for extreme-environment electronics.

Only a short abstract or summary was supplied by the source.

Source: crossref · Quality: short

Research context

Electronic materials

OpenAlex topics: Organic Electronics and Photovoltaics · Radiation Effects in Electronics · Covalent Organic Framework Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Federal Research Center for Problems of Chemical Physics and Medicinal Chemistry RAS, Academician Semenov ave. 1, Chernogolovka, 142432, Russia

Zhengzhou Advanced Research Institute of Harbin Institute of Technology, No. 112 Longhu Zhonghuan North Road, Jinshui District, Zhengzhou, Henan Province, P.R. China

Harbin Institute of Technology, 92 West Dazhi Street, Nan Gang District, Harbin, Heilongjiang Province, China

Funding

Russian Science Foundation

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