Deuterium-enabled stabilization of metal/oxide interfaces via suppressed oxygen diffusion in BEOL-compatible InGaZnO thin-film transistors

Abstract

Research context

OpenAlex topics: Thin-Film Transistor Technologies · Advanced Sensor and Energy Harvesting Materials · Advancements in Semiconductor Devices and Circuit Design

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Affiliations

Department of Electrical and Computer Engineering, Inha University, 100 Inha-ro, Michuhol-gu, Incheon 22212, Republic of Korea

ParkLab Semiconductor Inc., 1 Chungdae-ro, Seowon-gu, Cheongju-si, Chungcheongbuk-do 28644, Republic of Korea

Semiconductor R&D Center, Samsung Electronics, Co. Ltd., Giheung, South Korea

Department of Electronic Materials, Devices, and Equipment Engineering, Soonchunhyang University, Asan City, Chungcheongnam-do 31538, Republic of Korea

Department of Display Materials Engineering, Soonchunhyang University, Asan City, Chungcheongnam-do 31538, Republic of Korea

School of Electronics Engineering, Chungbuk National University, 1 Chungdae-ro, Seowon-gu, Cheongju-si, Chungcheongbuk-do 28644, Republic of Korea

Funding

National Research Foundation of Korea

References (66)