journal article·2026

Data-driven exploration of NaXTe 2 (X = Al, Ga, and In): from high-throughput screening to tailored optoelectronic functionalities

Changcheng Chen, Wenkang Yu, Xinhui Zhang, Chunling Zhang, Yue Cheng, Weijun Wang, Chunlian Xiong, Xunzhe Zhang, Jinkang Yu, Zhengjun Wang, Gang Liu, Jiangzhou Xie, Yaxin Xu, Xiaoning Guan, Pengfei Lu

Journal of Materials Chemistry C· Volume 14· Issue 23
Publisher page

Abstract

The rational design of semiconductors with tunable properties for optoelectronic applications remains challenging, especially beyond traditional paradigms limited by d-electron localization and instability.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short

Research context

OpenAlex topics: Machine Learning in Materials Science · 2D Materials and Applications · Advanced Thermoelectric Materials and Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Science, Xi’an University of Architecture and Technology, Xi’an, 710055, China

State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing, 100876, China

School of Mechanical and Manufacturing Engineering, University of New South Wales, Sydney, NSW 2052, Australia

MOE Key Laboratory for Non-Equilibrium Synthesis and Modulation of Condensed Matter, Key Laboratory for Advanced Materials and Mesoscopic Physics of Shaanxi Province, School of Physics, Xi’an Jiaotong University, Xi’an 710049, China

Ningbo Weiyuan Optoelectronic Research Institute Co., Ltd., Ningbo 315200, China

Funding

Natural Science Foundation of Shaanxi Province · National Key Research and Development Program of China · Yulin Science and Technology Bureau · Xi'an University of Architecture and Technology

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