DataVXJournal of Materials Chemistry CPaper
article·2026-01-01

6-Bit multilevel and highly linear synaptic plasticity in sputtered AlScN ferroelectric capacitors on (100) Si

Siyu Yan, Xuguang Deng, Qizhi Huang, Tiwei Chen, Gaofu Guo, Qichao Yang, Wei Cheng, Zhongming Zeng, Wenkui Lin, Baoshun Zhang

Journal of Materials Chemistry C
Publisher page
Source abstract

Abstract

Fully CMOS-compatible sputtered AlScN ferroelectric capacitors deliver 64 conductance states with near-linear weight updates, achieving 94.72% MNIST accuracy and validating their potential for large-scale neuromorphic computing.
Only a short abstract or summary was supplied by the source.
Source: openalex_inverted_index · Quality: short

Research context

Electronic materials

OpenAlex topics: Ferroelectric and Negative Capacitance Devices · Advanced Memory and Neural Computing · Ferroelectric and Piezoelectric Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References

Reference metadata was not supplied for this record.