Floating-gate synaptic transistors with bending resistance and strong charge storage capability via interfacial redispersion and reconfiguration
Abstract
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Neural Networks and Reservoir Computing
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Affiliations
Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, State Key Laboratory of Luminescent Materials and Devices, School of Materials Sciences and Engineering, South China University of Technology, Guangzhou, 510640, China
Department of Medical Devices, Guangdong Food and Drug Vocational College, Guangzhou, 510520, China
The International School of Microelectronics, Dongguan University of Technology, Dongguan, 523808, China
Siyuan Laboratory, Department of Physics, Jinan University, Guangzhou, 510632, China
Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China
Key Lab of Guangdong Province for High Property and Functional Polymer Materials, South China University of Technology, China
Funding
National Natural Science Foundation of China · National Key Research and Development Program of China · Natural Science Foundation of Guangdong Province · Department of Education of Guangdong Province · Special Project for Research and Development in Key areas of Guangdong Province · State Key Laboratory of Luminescent Materials and Devices · Songshan Lake Materials Laboratory