Improved performance of organic single-crystal thin-film transistors via contact doping with a high electron-affinity dopant
Source abstract
Abstract
NDP-9 contact doping with a high electron affinity reduces the Schottky barrier and trap density, enabling high-mobility organic single-crystal transistors with low subthreshold swing and long-term bias-stress stability.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: Organic Electronics and Photovoltaics · Organic and Molecular Conductors Research · Organic Light-Emitting Diodes Research
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Macao Institute of Materials Science and Engineering (MIMSE), MUST-SUDA Joint Research Center for Advanced Functional Materials, Macau University of Science and Technology, Taipa, Macau SAR 999078, China
State Key Laboratory of Bioinspired Interfacial Materials Science, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, China
Funding
National Key Research and Development Program of China · National Natural Science Foundation of China · Fundo para o Desenvolvimento das Ciências e da Tecnologia · Natural Science Foundation of Jiangsu Province
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