A cage-structured GaN allotrope with unconventional bonding breaks the ductility barrier of wide band gap semiconductors

Abstract

Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Boron and Carbon Nanomaterials Research · Nanowire Synthesis and Applications

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Affiliations

THz Technology Laboratory, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China

School of Materials Science and Engineering, Peking University, Beijing 100871, China

School of Life and Health Technology, Dongguan University of Technology, Dongguan 523808, China

Institute of Mathematics, University of the Punjab, Lahore 54590, Pakistan

School of Chemistry and Chemical Engineering, Shanxi University, Taiyuan 030006, China

Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China

Department of Physics and Astronomy, Sejong University, Seoul 05006, South Korea

State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China

DGUT-CNAM Institute, Dongguan University of Technology, Dongguan 523106, China

Funding

National Natural Science Foundation of China · Basic and Applied Basic Research Foundation of Guangdong Province · Shenzhen Municipal Science and Technology Innovation Council

References (71)