Arbitrary-ordered pulsed programming achieving 11 well-separated programming levels via a multilevel transistor–memristor series configuration
Source abstract
Abstract
A memristor device exhibits multilevel resistance states with excellent endurance and retention. Arbitrary-ordered programming enables precise and flexible access to 11 well-separated program levels, advancing high-density memory applications.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Transition Metal Oxide Nanomaterials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Program on Semiconductor Packaging and Testing, Academy of Innovative Semiconductor and Sustainable Manufacturing, National Cheng Kung University, Tainan, 70101, Taiwan
Department of Materials Science and Engineering, National Cheng Kung University, Tainan, 70101, Taiwan
Funding
National Science and Technology Council
References (48)
Show source-provided references
1. Zahoor · Nanoscale Res. Lett. · 2020 · 15 · 9010.1186/s11671-020-03299-9 ↗
2. Prakash · IEEE Electron Device Lett. · 2015 · 36 · 3210.1109/LED.2014.2375200 ↗
3. Ficili · Sensors · 2025 · 25 · 176310.3390/s25061763 ↗
4. J.Yu and K.Aflatooni , 2006 16th Biennial University/Government/Industry Microelectronics Symposium , USA, 2006 10.1109/UGIM.2006.428638010.1109/UGIM.2006.4286380 ↗
5. Wang · Appl. Phys. Rev. · 2025 · 12 · 02132810.1063/5.0230234 ↗
6. Abbas · Jpn. J. Appl. Phys. · 2018 · 57 · 06HC0310.7567/JJAP.57.06HC03 ↗
7. Guan · Appl. Phys. Lett. · 2008 · 93 · 22350610.1063/1.3039079 ↗
8. Kim · Nanomaterials · 2022 · 12 · 333410.3390/nano12193334 ↗
9. Maldonado · Nanoscale · 2024 · 16 · 1902110.1039/D4NR02975E ↗
10. Makioka · IEEE J. Electron Devices Soc. · 2023 · 11 · 17410.1109/JEDS.2023.3253465 ↗
11. Khan · ACS Appl. Electron. Mater. · 2024 · 6 · 7310.1021/acsaelm.3c01323 ↗
12. Lin · Electronics · 2021 · 10 · 73110.3390/electronics10060731 ↗
13. Chen · Semicond. Sci. Technol. · 2015 · 30 · 07500210.1088/0268-1242/30/7/075002 ↗
14. Zhao · Nanoscale · 2014 · 6 · 569810.1039/C4NR00500G ↗
15. Park · Nat. Commun. · 2024 · 15 · 349210.1038/s41467-024-46682-1 ↗
16. Bousoulas · IEEE Electron Device Lett. · 2016 · 37 · 87410.1109/LED.2016.2575065 ↗
17. Bousoulas · J. Appl. Phys. · 2017 · 121 · 09450110.1063/1.4977063 ↗
18. Kim · IEEE Electron Device Lett. · 2016 · 37 · 56410.1109/LED.2016.2542879 ↗
19. Prakash · Appl. Phys. Lett. · 2015 · 106 · 23310410.1063/1.4922446 ↗
20. Khan · Nanoscale · 2025 · 17 · 1115210.1039/D4NR04865B ↗
21. Parreira · J. Phys. D: Appl. Phys. · 2016 · 49 · 09511110.1088/0022-3727/49/9/095111 ↗
22. Wu · Semicond. Sci. Technol. · 2012 · 27 · 06501010.1088/0268-1242/27/6/065010 ↗
23. Wang · Microelectron. Eng. · 2011 · 88 · 162810.1016/j.mee.2010.11.058 ↗
24. Huang · RSC Adv. · 2016 · 6 · 1786710.1039/C5RA22728C ↗
25. Tsigkourakos · Phys. Status Solidi A · 2017 · 214 · 170057010.1002/pssa.201700570 ↗
26. Ju · Nanomaterials · 2023 · 13 · 247710.3390/nano13172477 ↗
27. Khan · Sens. Actuators, A · 2025 · 385 · 11631610.1016/j.sna.2025.116316 ↗
28. Rajwali · Mater. Sci. Semicond. Process. · 2025 · 186 · 10911110.1016/j.mssp.2024.109111 ↗
29. Xu · Int. J. Extreme Manuf. · 2024 · 7 · 02550710.1088/2631-7990/ad9bff ↗
30. Zhao · Annu. Rev. Mater. Res. · 2025 · 1 · 100103
31. Kim · Chaos, Solitons Fractals · 2021 · 153 · 11158710.1016/j.chaos.2021.111587 ↗
32. Ismail · J. Mater. Sci. Technol. · 2022 · 106 · 9810.1016/j.jmst.2021.08.012 ↗
33. Waser · Faraday Discuss. · 2019 · 213 · 1110.1039/C8FD90058B ↗
34. D.Zhu , X.Ding , P.Huang , Z.Zhou , X.Ma , L.Liu , J.Kang and X.Zhang , 2017 Silicon Nanoelectronics Workshop (SNW) , Japan , 2017
35. Xu · IEEE Electron Device Lett. · 2015 · 36 · 55510.1109/LED.2015.2427393 ↗
36. Perez · IEEE Trans. Electron Devices · 2021 · 68 · 269310.1109/TED.2021.3072868 ↗
37. Milo · IEEE Trans. Electron Devices · 2021 · 68 · 383210.1109/TED.2021.3089995 ↗
38. A.Prakash , J. S.Park , J.Song , S. J.Lim , J. H.Park , J.Woo , E.Cha and H.Hwang , 2015 International Symposium on Next-Generation Electronics (ISNE) , Taiwan , 2015
39. Wang · ACS Appl. Mater. Interfaces · 2021 · 14 · 155710.1021/acsami.1c19364 ↗
40. Park · Nat. Commun. · 2013 · 4 · 238210.1038/ncomms3382 ↗
41. Liu · IEEE Access · 2025 · 4455510.1109/ACCESS.2025.3547818 ↗
42. Lanza · Adv. Electron. Mater. · 2019 · 5 · 180014310.1002/aelm.201800143 ↗
43. Chen · J. Phys. Chem. C · 2013 · 117 · 575810.1021/jp311951e ↗
44. Li · J. Appl. Phys. · 2025 · 137 · 11450110.1063/5.0246985 ↗
45. Merced-Grafals · Nanotechnology · 2016 · 27 · 36520210.1088/0957-4484/27/36/365202 ↗
46. Chen · IEEE Trans. Electron Devices · 2023 · 70 · 101410.1109/TED.2023.3236316 ↗
47. E. P.-B.Quesada , T.Rizzi , A.Gupta , M. K.Mahadevaiah , A.Schubert , S.Pechmann , R.Jia , M.Uhlmann , A.Hagelauer , E.Perez and C.Wenger , Spanish Conference on Electron Devices , Spanish, 2023 10.1109/CDE58627.2023.1033952510.1109/CDE58627.2023.10339525 ↗
48. Milo · IEEE Trans. Electron Devices · 2021 · 68 · 383210.1109/TED.2021.3089995 ↗