journal article·2026Open access

Intrinsic physical properties of flexible van der Waals semiconductor InSe

Jacob Svane, Kim-Khuong Huynh, Yong P. Chen, Bo Brummerstedt Iversen

Journal of Materials Chemistry C· Volume 14· Issue 4

Abstract

By a tailored floating zone method, we successfully overcome thermodynamic challenges to obtain pure-phase InSe crystals for the first time. Our InSe closely approaches the intrinsic limit, establishing it as a benchmark material for future studies.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short

Research context

OpenAlex topics: 2D Materials and Applications · Advanced Thermoelectric Materials and Devices · Topological Materials and Phenomena

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Center for Sustainable Energy Materials, Department of Chemistry, Aarhus University, 8000 Aarhus C, Denmark

Department of Physics and Astronomy, Aarhus University, 8000 Aarhus C, Denmark

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