Enhanced charge trapping effect in PVA/PbI 2 synaptic transistors achieved through integrated UV irradiation and thermal annealing treatments
Source abstract
Abstract
This study investigates the effects of UV irradiation intensity and thermal annealing on PbI 2 films. By increasing the number of iodine vacancies in PbI 2 , the charge trapping capability of PVA/PbI 2 synaptic transistors is enhanced.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Neuroscience and Neural Engineering · CCD and CMOS Imaging Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, State Key Laboratory of Luminescent Materials and Devices, School of Materials Sciences and Engineering, South China University of Technology, Guangzhou 510640, China
The International School of Microelectronics, Dongguan University of Technology, Dongguan 523808, China
Siyuan Laboratory, Department of Physics, Jinan University, Guangzhou 510632, China
Key Lab of Guangdong Province for High Property and Functional Polymer Materials, South China University of Technology, Guangzhou, China
Funding
National Natural Science Foundation of China · Natural Science Foundation of Guangdong Province · Department of Education of Guangdong Province
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