Correction: Effective strategies for current boosting in a mesa-shaped In–Ga–Zn–O vertical-channel thin-film transistor with a short-channel length of 40 nm
Source abstract
Abstract
Correction for ‘Effective strategies for current boosting in a mesa-shaped In–Ga–Zn–O vertical-channel thin-film transistor with a short-channel length of 40 nm’ by Chae-Eun Oh et al. , J. Mater. Chem. C , 2024, 12 , 14455–14468, https://doi.org/10.1039/D4TC02779E.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Thin-Film Transistor Technologies · Semiconductor materials and devices · ZnO doping and properties
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Affiliations
Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, Gyeonggi-do 17104, Korea
NCD Co., Ltd, Daejeon 34015, Korea
Funding
Korea Evaluation Institute of Industrial Technology · National Research Foundation of Korea
References
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