DataVXJournal of Materials Chemistry CPaper
journal article·2018Open access

Correction: Integration of BiFeO 3 /La 0.7 Sr 0.3 MnO 3 heterostructures with III–V semiconductors for low-power non-volatile memory and multiferroic field effect transistors

Md. Shafiqur Rahman, Susmita Ghose, Liang Hong, Pradip Dhungana, Abbas Fahami, Javad R. Gatabi, Juan S. Rojas-Ramirez, Alex Zakhidov, Robert F. Klie, R. K. Pandey, Ravi Droopad

Journal of Materials Chemistry C· Volume 6· Issue 31
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Source abstract

Abstract

Correction for ‘Integration of BiFeO 3 /La 0.7 Sr 0.3 MnO 3 heterostructures with III–V semiconductors for low-power non-volatile memory and multiferroic field effect transistors’ by Md. Shafiqur Rahman et al. , J. Mater. Chem. C , 2016, 4 , 10386–10394.
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Research context

Electronic materials

OpenAlex topics: Multiferroics and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Material Science

Engineering and Commercialization

Texas State University

San Marcos

USA

Department of Physics

University of Illinois at Chicago

Chicago

Ingram School of Engineering

References

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