DataVXJournal of Materials Chemistry CPaper
journal article·2018Open access

Correction: A selectively processible instant glue passivation layer for indium gallium zinc oxide thin-film transistors fabricated at low temperature

Hyukjoon Yoo, Young Jun Tak, Won-Gi Kim, Yeong-gyu Kim, Hyun Jae Kim

Journal of Materials Chemistry C· Volume 6· Issue 38
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Source abstract

Abstract

Correction for ‘A selectively processible instant glue passivation layer for indium gallium zinc oxide thin-film transistors fabricated at low temperature’ by Hyukjoon Yoo et al. , J. Mater. Chem. C , 2018, 6 , 6187–6193.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short

Research context

Electronic materials

OpenAlex topics: Thin-Film Transistor Technologies · ZnO doping and properties · Nanowire Synthesis and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Electrical and Electronic Engineering

Yonsei University

Seoul 03722

Republic of Korea

References (3)

Show source-provided references
1. Sheng · J. Inf. Disp. · 2017 · 18 · 15910.1080/15980316.2017.1385544 ↗
2. Tak · J. Inf. Disp. · 2016 · 17 · 7310.1080/15980316.2016.1172524 ↗
3. Hong · J. Inf. Disp. · 2016 · 17 · 9310.1080/15980316.2016.1200501 ↗