journal article·2024

High-performance and low-power sub-5 nm field-effect transistors based on 7-9-7-AGNR

Hang Guo, Xian Zhang, Shuai Chen, Li Huang, Yan Dong, Zhi-Xin Guo

Journal of Materials Chemistry C· Volume 12· Issue 9
Publisher page

Abstract

The 7-9-7 AGNR is an ideal channel material for sub-5-nm one-dimensional FETs and is suitable for high-performance and low-power applications.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short

Research context

OpenAlex topics: Advancements in Semiconductor Devices and Circuit Design · GaN-based semiconductor devices and materials · Nanowire Synthesis and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory for Mechanical Behavior of Materials, Center for Spintronics and Quantum System, School of Materials Science and Engineering, Xi’an Jiaotong University, Xi’an, Shaanxi, 710049, China

Shaanxi Key Laboratory of Surface Engineering and Remanufacturing College of Mechanical and Materials Engineering Xi’an University, Xi’an 710065, China

Jinan Aviation Repair Factory, No. 600, Zhangjiazhuang, Jinan, 250000, China

State Key Laboratory of Oral & Maxillofacial Reconstruction and Regeneration, National Clinical Research Center for Oral Diseases, Shaanxi International Joint Research Center for Oral Diseases, Department of General Dentistry and Emergency, School of Stomatology, Fourth Military Medical University, Xi’an 710032, China

Funding

National Natural Science Foundation of China

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