journal article·2023

Electronic structure and optical spectra of MSi 2 N 4 (M = Mo, Ta, V) materials with single-atom decoration: a first-principles study

Tzu-Cheng Wu, Yin-Song Liao, Jui-Cheng Kao, Jyh-Pin Chou

Journal of Materials Chemistry C· Volume 11· Issue 43
Publisher page

Abstract

Single atom decoration can modify the electronic properties, making TaSi 2 N 4 suitable for spintronics and turning VSi 2 N 4 into a half-metal semiconductor. These findings have potential applications in advanced electronic devices.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short

Research context

OpenAlex topics: Semiconductor materials and devices · Electronic and Structural Properties of Oxides · MXene and MAX Phase Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Physics, National Tsing Hua University, Hsinchu 300044, Taiwan

The Affiliated Senior High School of National Taiwan Normal University, Taipei 10658, Taiwan

Tsing Hua Interdisciplinary Program, National Tsing Hua University, Hsinchu 300044, Taiwan

Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300044, Taiwan

Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan

Department of Physics, National Changhua University of Education, Changhua 50007, Taiwan

Funding

National Science and Technology Council

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