Atomistic insights into hydrogen migration in IGZO from machine-learning interatomic potential: linking atomic diffusion to device performance

Hyunsung Cho; Minseok Moon; Jaehoon Kim; Eunkyung Koh; Hyeon-Deuk Kim; Rokyeon Kim; Gyehyun Park; Seungwu Han; Youngho Kang

doi:10.1039/d5tc03190g

journal article·2026

Atomistic insights into hydrogen migration in IGZO from machine-learning interatomic potential: linking atomic diffusion to device performance

Hyunsung Cho, Minseok Moon, Jaehoon Kim, Eunkyung Koh, Hyeon-Deuk Kim, Rokyeon Kim, Gyehyun Park, Seungwu Han, Youngho Kang

Journal of Materials Chemistry C· Volume 14· Issue 1

Publisher page

Source abstract

Abstract

Understanding hydrogen diffusion is critical for improving the reliability and performance of oxide thin-film transistors (TFTs), where hydrogen plays a key role in carrier modulation and bias instability.

Only a short abstract or summary was supplied by the source.

Source: crossref · Quality: short

Research context

Electronic materials

OpenAlex topics: Thin-Film Transistor Technologies · Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Materials Science and Engineering and Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea

Display Research Center, Samsung Display Company Ltd., Yongin-si 17113, Republic of Korea

Center for AI and Natural Sciences, Korea Institute for Advanced Study, Seoul 02455, Republic of Korea

Department of Materials Science and Engineering, Incheon National University, Incheon 22012, Republic of Korea

Funding

National Research Foundation of Korea · Korea Institute of Science and Technology Information

References (73)

Show source-provided references

1. Nomura · Nature · 2004 · 432 · 48810.1038/nature03090 ↗

2. Kwon · IEEE Electron Device Lett. · 2008 · 29 · 130910.1109/LED.2008.2006637 ↗

3. Kamiya · Sci. Technol. Adv. Mater. · 2010 · 11 · 04430510.1088/1468-6996/11/4/044305 ↗

4. Ide · Phys. Status Solidi A · 2019 · 216 · 180037210.1002/pssa.201800372 ↗

5. Samanta · IEEE Electron Device Lett. · 2020 · 41 · 85610.1109/LED.2020.2985787 ↗

6. Lopez · Commun. Eng. · 2024 · 3 · 10210.1038/s44172-024-00248-7 ↗

7. Li · Int. Electron Devices Meet. · 2022 · 2.7.1

8. An · Int. Electron Devices Meet. · 2022 · 18.1.1

9. Chen · J. Semicond. · 2023 · 44 · 09160210.1088/1674-4926/44/9/091602 ↗

10. Yap · Appl. Surf. Sci. Adv. · 2023 · 16 · 10042310.1016/j.apsadv.2023.100423 ↗

11. Zhu · IEEE Electron Device Lett. · 2024 · 45 · 160210.1109/LED.2024.3424473 ↗

12. Zhang · IEEE Electron Device Lett. · 2025 · 46 · 43210.1109/LED.2025.3531369 ↗

13. Chen · IEEE Electron Device Lett. · 2011 · 32 · 155210.1109/LED.2011.2165694 ↗

14. Kim · J. Phys. D: Appl. Phys. · 2013 · 46 · 05510410.1088/0022-3727/46/5/055104 ↗

15. Nomura · ECS J. Solid State Sci. Technol. · 2013 · 2 · P510.1149/2.011301jss ↗

16. Tang · J. Appl. Phys. · 2015 · 118 · 20570310.1063/1.4936552 ↗

17. Toda · IEEE Trans. Electron Devices · 2014 · 61 · 376210.1109/TED.2014.2359739 ↗

18. Nam · RSC Adv. · 2018 · 8 · 562210.1039/C7RA12841J ↗

19. Noh · Sci. Rep. · 2022 · 12 · 1981610.1038/s41598-022-24212-7 ↗

20. Oh · IEEE Trans. Electron Devices · 2013 · 60 · 253710.1109/TED.2013.2265326 ↗

21. Kamiya · Phys. Status Solidi A · 2010 · 207 · 169810.1002/pssa.200983772 ↗

22. Kamiya · J. Disp. Technol. · 2009 · 5 · 27310.1109/JDT.2009.2021582 ↗

23. Noh · J. Appl. Phys. · 2013 · 113 · 06371210.1063/1.4792229 ↗

24. Kim · Appl. Phys. Lett. · 2020 · 116 · 01350210.1063/1.5132372 ↗

25. Chen · IEEE Trans. Electron Devices · 2020 · 67 · 312310.1109/TED.2020.2998101 ↗

26. Jeon · AIP Adv. · 2017 · 7 · 12511010.1063/1.5008435 ↗

27. Meux · Phys. Rev. Appl. · 2018 · 9 · 05403910.1103/PhysRevApplied.9.054039 ↗

28. Shvachko · Surf. Sci. · 1998 · 411 · L88210.1016/S0039-6028(98)00404-X ↗

29. Chen · Int. J. Hydrogen Energy · 2025 · 136 · 78910.1016/j.ijhydene.2024.04.076 ↗

30. Qin · J. Appl. Phys. · 2018 · 123 · 16150610.1063/1.4995593 ↗

31. Reinertsen · Appl. Phys. Lett. · 2020 · 117 · 23210610.1063/5.0027333 ↗

32. Kim · Comput. Mater. Sci. · 2022 · 203 · 11110910.1016/j.commatsci.2021.111109 ↗

33. He · npj Comput. Mater. · 2018 · 4 · 1810.1038/s41524-018-0074-y ↗

34. Franckel · Phys. Rev. B · 2024 · 110 · L22010110.1103/PhysRevB.110.L220101 ↗

35. Unke · Chem. Rev. · 2021 · 121 · 1014210.1021/acs.chemrev.0c01111 ↗

36. Park · J. Chem. Theory Comput. · 2024 · 20 · 485710.1021/acs.jctc.4c00190 ↗

37. Deng · Nat. Mach. Intell. · 2023 · 5 · 103110.1038/s42256-023-00716-3 ↗

38. Batzner · Nat. Commun. · 2022 · 13 · 245310.1038/s41467-022-29939-5 ↗

39. Grunert · J. Phys. Chem. C · 2025 · 129 · 966210.1021/acs.jpcc.5c02064 ↗

40. Thompson · Comput. Phys. Commun. · 2022 · 271 · 10817110.1016/j.cpc.2021.108171 ↗

41. S. Y.Lee , H.Kim , Y.Park , D.Jeong , S.Han , Y.Park and J. W.Lee , Forty-second International Conference on Machine Learning , 2025 , https://openreview.net/forum?id=wiQe95BPaB

42. Larsen · J. Phys.: Condens. Matter · 2017 · 29 · 273002

43. Kresse · Phys. Rev. B: Condens. Matter Mater. Phys. · 1996 · 54 · 1116910.1103/PhysRevB.54.11169 ↗

44. Perdew · Phys. Rev. Lett. · 1996 · 77 · 386510.1103/PhysRevLett.77.3865 ↗

45. Baldereschi · Phys. Rev. B · 1972 · 7 · 521210.1103/PhysRevB.7.5212 ↗

46. Nomura · Phys. Rev. B: Condens. Matter Mater. Phys. · 2007 · 75 · 03521210.1103/PhysRevB.75.035212 ↗

47. Kang · APL Mater. · 2014 · 2 · 03210810.1063/1.4868175 ↗

48. Hino · ECS Solid State Lett. · 2012 · 1 · Q5110.1149/2.003206ssl ↗

49. Kimizuka · J. Solid State Chem. · 1995 · 116 · 17010.1006/jssc.1995.1198 ↗

50. Hosono · J. Non-Cryst. Solids · 2008 · 354 · 279610.1016/j.jnoncrysol.2007.10.071 ↗

51. Cho · Appl. Phys. Lett. · 2009 · 94 · 11211210.1063/1.3103323 ↗

52. Bang · Appl. Phys. Lett. · 2017 · 110 · 23210510.1063/1.4985627 ↗

53. J.Kim , J.Lee , S.Oh , Y.Park , S.Hwang , S.Han , S.Kang and Y.Kang , arXiv , 2025 , preprint, arxiv:2506.15223, https://arxiv.org/abs/2506.15223

54. Kang · J. Chem. Phys. · 2024 · 161 · 24410210.1063/5.0234287 ↗

55. Chung · Appl. Phys. Lett. · 2015 · 107 · 18350310.1063/1.4935026 ↗

56. Noh · Phys. Rev. B: Condens. Matter Mater. Phys. · 2011 · 84 · 11520510.1103/PhysRevB.84.115205 ↗

57. Omura · J. Appl. Phys. · 2009 · 105 · 09371210.1063/1.3089232 ↗

58. Chen · Jpn. J. Appl. Phys. · 2011 · 50 · 09110210.1143/JJAP.50.091102 ↗

59. Kang · Adv. Electron. Mater. · 2015 · 1 · 140000610.1002/aelm.201400006 ↗

60. Nakashima · J. Appl. Phys. · 2014 · 116 · 21370310.1063/1.4902859 ↗

61. Belmonte · Int. Electron Devices Meet. · 2020 · 28.2.1

62. Tang · Int. Electron Devices Meet. · 2024 · 1

63. Chang · IEEE Trans. Electron Devices · 2014 · 61 · 211910.1109/TED.2014.2319105 ↗

64. McIntosh · J. Phys. Chem. Lett. · 2013 · 4 · 156510.1021/jz400622v ↗

65. Li · IEEE J. Electron Devices Soc. · 2019 · 7 · 106310.1109/JEDS.2019.2946383 ↗

66. Park · IEEE Trans. Electron Devices · 2015 · 62 · 290010.1109/TED.2015.2458987 ↗

67. Kang · Mater. Res. Bull. · 2021 · 139 · 11125210.1016/j.materresbull.2021.111252 ↗

68. Ono · Int. Electron Devices Meet. · 2020 · 39.4.1

69. Wert · Phys. Rev. · 1949 · 76 · 116910.1103/PhysRev.76.1169 ↗

70. Friauf · J. Appl. Phys. · 1962 · 33 · 49410.1063/1.1777148 ↗

71. Naundorf · J. Non-Cryst. Solids · 1999 · 250 · 67910.1016/S0022-3093(99)00159-3 ↗

72. Yelon · Rep. Prog. Phys. · 2006 · 69 · 114510.1088/0034-4885/69/4/R04 ↗

73. Strauß · Phys. Rev. Lett. · 2016 · 116 · 02590110.1103/PhysRevLett.116.025901 ↗