journal article·2025

Ultra-high brightness near-infrared perovskite light-emitting diodes enabled by aluminum-doped zinc oxide electron transport layers

Johan Iskandar, Chih-Yi Liu, Mao-Cheng Huang, Chutipol Harnthanasak, Galing Murokinas, Yi-Sheng Chen, Didik Notosudjono, Chih-Chien Lee, Shun-Wei Liu

Journal of Materials Chemistry C· Volume 13· Issue 41
Publisher page

Abstract

The integration of AZO as an electron transport layer enhances NIR PeLED brightness to 3313 W sr −1 m −2 , a 146% improvement over ZnO-based devices, due to improved charge injection, reduced resistance, and better carrier transport dynamics.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short

Research context

OpenAlex topics: Perovskite Materials and Applications · Organic Light-Emitting Diodes Research · Conducting polymers and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Artificial Intelligence and Robotics, Pakuan University, Bogor, 16143, Indonesia

Organic Electronics Research Center, Ming Chi University of Technology, New Taipei City 243303, Taiwan

College of Engineering, Ming Chi University of Technology, New Taipei City, 24301, Taiwan

Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei City 106335, Taiwan

Department of Electronic Engineering, Ming Chi University of Technology, New Taipei City 243303, Taiwan

Department of Electrical Engineering, Pakuan University, Bogor, 16143, Indonesia

Center for Sustainability and Energy Technologies, Chang Gung University, Taoyuan, 33302, Taiwan

Funding

Chang Gung University · National Science and Technology Council · Ming Chi University of Technology

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