journal article·2024

Revealing the effect of conductive mechanism on the voltage endurance of ferroelectric thin films via controlling the deposition temperature for reaching high energy storage capability

Hongmei Jing, Shibo Zhao, Ting Wang, Wanbiao Hu, Liming Diwu, Jingru Xu, Peiqiao Han, Miao Liu, Zhuo Wang, Zixiong Sun

Journal of Materials Chemistry C· Volume 12· Issue 45
Publisher page

Abstract

By controlling the conducting mechanism of BCZT–BZT thin films, which was significantly affected by the deposition temperature, the voltage endurance was strongly enhanced, and the energy storage performance was also optimized.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short

Research context

OpenAlex topics: Ferroelectric and Piezoelectric Materials · Semiconductor materials and devices · Block Copolymer Self-Assembly

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Physics and Information Technology, Shaanxi Normal University, Xi'an, 710119, P. R. China

Guangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University, Huizhou 516001, Guangdong, China

Yunnan Key Laboratory of Electromagnetic Materials and Devices, China

School of Electronic Information and Artificial Intelligence, Shaanxi University of Science and Technology, Xi’an 710021, P. R. China

Institute of Industrial Hygiene of Ordnance Industry, Xi’an Shaanxi 710065, China

School of Materials Science and Engineering, Shaanxi University of Science and Technology, Xi’an 710021, P. R. China

Funding

National Natural Science Foundation of China · Yunnan University

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