Enhanced performance of a Mg 2 Si/Si heterojunction photodetector grown with the assistance of nanostructures
Source abstract
Abstract
This graph shows a Mg 2 Si/Si heterojunction photodetector fabricated with the assistance of nanostructures, enabling enhanced optoelectronic performance with a 173–402% improvement in responsivity and a 111–281% improvement in specific detectivity.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Semiconductor materials and interfaces · Chalcogenide Semiconductor Thin Films · Advanced Semiconductor Detectors and Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
Key Laboratory of Science and Technology on Infrared Detector, Luoyang 471099, China
Tianfu Jiangxi Laboratory, Chengdu 641419, China
Funding
Aeronautical Science Foundation of China · National Natural Science Foundation of China · Natural Science Foundation of Sichuan Province
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