Uncovering cation disorder in ternary Zn 1+ x Ge 1− x (N 1− x O x ) 2 and its effect on the optoelectronic properties
Source abstract
Abstract
Ternary nitrides have potential as sustainable solar absorber materials. Their structures permit unique bandgap tuning through cation disorder. We experimentally show two independent disorder modes influencing the bandgap in similar but distinct ways.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: ZnO doping and properties · Semiconductor materials and devices · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Helmholtz-Zentrum Berlin für Materialien und Energie, Department Structure and Dynamics of Energy Materials, Hahn-Meitner-Platz 1, 14109 Berlin, Germany
Freie Universität Berlin, Department Geosciences, Malteserstraße 74-100, 12249 Berlin, Germany
Institut Laue-Langevin, Avenue des Martyrs, 38000 Grenoble, France
Funding
Helmholtz-Zentrum Berlin für Materialien und Energie
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