Rapid growth of a 24 mm 2 scale hexagonal boron nitride crystal in Ni–Cr solution
Source abstract
Abstract
A 24 mm 2 exfoliated hBN film is achieved within a total growth time of 49.17 hours. A signal-to-noise ratio of 2 orders of magnitude is reported for a metal–semiconductor–metal type photodetector based on hBN.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Nanowire Synthesis and Applications · Diamond and Carbon-based Materials Research
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Electronics and Information Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, China
Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
Changchun College of Electronic Technology, 333 Xueli Road, Changchun, 130114, China
School of Integrated Circuits, Nanjing University, Suzhou, 215163, China
Funding
National Natural Science Foundation of China · China Postdoctoral Science Foundation
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