Suppression of short channel effects in ferroelectric Si junctionless transistors with a sub-10 nm gate length defined by helium ion beam lithography
Source abstract
Abstract
Short channel effects in Si junctionless transistors with a gate length below 10 nm are reduced by the ferroelectric Hf 0.5 Zr 0.5 O 2 gate oxide.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: Ferroelectric and Negative Capacitance Devices · Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science and Engineering
National Taiwan University
Taipei
Republic of China
Funding
Taiwan Semiconductor Manufacturing Company · Ministry of Science and Technology, Taiwan
References (47)
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