Alkylsilyl compounds as enablers of atomic layer deposition: analysis of (Et 3 Si) 3 As through the GaAs process
Source abstract
Abstract
A new chemistry has been developed to deposit GaAs, the quintessential compound semiconductor.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: Semiconductor materials and devices · Semiconductor materials and interfaces · Semiconductor Quantum Structures and Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Laboratory of Inorganic Chemistry
Department of Chemistry
University of Helsinki
Finland
Department of Physics
University of Jyväskylä
Division of Material Physics
References (39)
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