Influence of praseodymium content and postdeposition annealing on the structural and sensing characteristics of PrTi x O y sensing films using the sol–gel spin-coating method
Source abstract
Abstract
In this paper, we developed a low-cost, simple and rapid fabrication method for a PrTi x O y electrolyte–insulator–semiconductor (EIS) sensor using the sol–gel spin-coating technique.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: Analytical Chemistry and Sensors · Gas Sensing Nanomaterials and Sensors · Electronic and Structural Properties of Oxides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electronics Engineering
Chang Gung University
Taoyuan 33302
Taiwan
Division of Urology
Funding
Ministry of Science and Technology · Chang Gung Memorial Hospital, Linkou
References (35)
Show source-provided references
1. Vonau · J. Solid State Electrochem. · 2006 · 10 · 74610.1007/s10008-006-0120-4 ↗
2. Korostynska · IEEE Sens. J. · 2008 · 8 · 2010.1109/JSEN.2007.912522 ↗
3. Bergveld · IEEE Trans. Biomed. Eng. · 1970 · 17 · 7010.1109/TBME.1970.4502688 ↗
4. Bergveld · Sens. Actuators, B · 2003 · 88 · 110.1016/S0925-4005(02)00301-5 ↗
5. Wilk · J. Appl. Phys. · 2001 · 89 · 524310.1063/1.1361065 ↗
6. E. Gusev , Defects in High-k Gate Dielectrics Stacks, Springer, Dordrecht, 200610.1007/1-4020-4367-8 ↗
7. M. Fanciulli and G.Scarel, Rare Earth Oxide Thin Film: Growth, Characterization, and Applications, Springer, Berlin, 200710.1007/b137342 ↗
8. High-k Gate Dielectrics for CMOS Technology, ed. G. He and Z. Sun, Wiley-VCH Verlag GmbH & Co., Weinheim, 2012
9. Nigro · Adv. Mater. · 2003 · 15 · 107110.1002/adma.200304806 ↗
10. Pan · IEEE Sens. J. · 2008 · 8 · 185610.1109/JSEN.2008.2006259 ↗
11. Zhao · Appl. Phys. Lett. · 2006 · 89 · 25290510.1063/1.2420794 ↗
12. van Dover · Appl. Phys. Lett. · 1999 · 74 · 304110.1063/1.124058 ↗
13. Schroeder · Appl. Phys. Lett. · 2005 · 87 · 02290210.1063/1.1978978 ↗
14. Pan · Sens. Actuators, B · 2007 · 128 · 24510.1016/j.snb.2007.06.006 ↗
15. Liao · Sens. Actuators, B · 1998 · 50 · 10410.1016/S0925-4005(98)00162-2 ↗
16. Ismail · Sens. Actuators, B · 2000 · 71 · 16910.1016/S0925-4005(99)00380-9 ↗
17. Mikolajick · Sens. Actuators, B · 1997 · 44 · 26210.1016/S0925-4005(97)00166-4 ↗
18. Lee · Sens. Actuators, B · 2013 · 181 · 81010.1016/j.snb.2013.02.080 ↗
19. Lee · Sens. Lett. · 2011 · 9 · 310.1166/sl.2011.1407 ↗
20. Batista · J. Mater. Sci. · 2010 · 45 · 547810.1007/s10853-010-4603-4 ↗
21. Kimura · Anal. Chem. · 1997 · 69 · 237910.1021/ac9611069 ↗
22. Nigro · J. Electrochem. Soc. · 2004 · 151 · F20610.1149/1.1779336 ↗
23. Zhao · Appl. Phys. Lett. · 2006 · 88 · 07290410.1063/1.2174840 ↗
24. Ogasawara · Phys. Rev. B: Condens. Matter Mater. Phys. · 1994 · 44 · 546510.1103/PhysRevB.44.5465 ↗
25. Uwamino · J. Electron Spectrosc. Relat. Phenom. · 1984 · 34 · 6710.1016/0368-2048(84)80060-2 ↗
26. Atuchin · J. Electron Spectrosc. Relat. Phenom. · 2006 · 152 · 1810.1016/j.elspec.2006.02.004 ↗
27. Shinwari · Microelectron. Reliab. · 2007 · 47 · 202510.1016/j.microrel.2006.10.003 ↗
28. Bousse · IEEE Trans. Electron Devices · 1983 · 30 · 126310.1109/T-ED.1983.21284 ↗
29. P. Bergveld and A.Sibbald, Comprehensive Analytical Chemistry. Analytical and Biomedical Applications of Ion-Selective Field-Effect Transistors, Elsevier Science Publishing Company Inc., New York, 1988, vol. 23
30. Kao · Sens. Actuators, B · 2014 · 194 · 50310.1016/j.snb.2013.12.103 ↗
31. Matsuo · IEEE Trans. Electron Devices · 1979 · 26 · 185610.1109/T-ED.1979.19780 ↗
32. Schoning · Sens. Actuators, B · 2005 · 111–112 · 42310.1016/j.snb.2005.03.053 ↗
33. Chang · Sensors · 2010 · 10 · 464310.3390/s100504643 ↗
34. Chou · Sens. Actuators, B · 2002 · 58 · 86
35. Jan · Sens. Actuators, B · 2005 · 108 · 88310.1016/j.snb.2004.12.033 ↗