Lowering contact resistance by SWCNT–Al bilayer electrodes in solution processable metal-oxide thin film transistor
Source abstract
Abstract
The electrical properties of the SWCNT and SWCNT–Al bilayer electrode TFTs on ITO coated glass substrate with HfO 2 gate dielectric and In 2 O 3 channel layer. The inset shows an optical image of the SWCNT–Al bilayer electrode TFT.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: Thin-Film Transistor Technologies · Semiconductor materials and devices · Organic Electronics and Photovoltaics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science and Engineering
Yonsei University
Seoul 120-749
Korea
College of BioNano Technology
Gachon University
Seongnam-si
School of Electrical and Electronic Engineering
LG Display LCD Research and Development Center
Paju-si
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