Ferroelectric memristors optimized in thickness for short-term memory-driven reservoir computing
Source abstract
Abstract
Thickness-optimized Mo/HZO/Si ferroelectric memristors show strong STM, high polarization, large TER, and self-rectification. A 5-nm HZO enables multilevel synapses and reservoir computing with 98.71% Hand-MNIST accuracy for in-sensor hardware.
Only a short abstract or summary was supplied by the source.
Source: openalex_inverted_index · Quality: short
Research context
OpenAlex topics: Ferroelectric and Negative Capacitance Devices · Advanced Memory and Neural Computing · Ferroelectric and Piezoelectric Materials
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References
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