Stable operation of two-dimensional field-effect transistors with van der Waals integrated SrTiO ₃ top-gate dielectrics

Yanran Liu; Allen Jian Yang; Shanhu Wang; Huiping Han; Jiayi Qin; Zhiwei Li; Tianli Jin; Josephine Si Yu See; Liang Wu; X. Renshaw Wang

doi:10.1039/d5tc02024g

journal article·2025

Stable operation of two-dimensional field-effect transistors with van der Waals integrated SrTiO ₃ top-gate dielectrics

Yanran Liu, Allen Jian Yang, Shanhu Wang, Huiping Han, Jiayi Qin, Zhiwei Li, Tianli Jin, Josephine Si Yu See, Liang Wu, X. Renshaw Wang

Journal of Materials Chemistry C· Volume 13· Issue 39

Publisher page

Source abstract

Abstract

We present high-performance top-gated monolayer MoS ₂ FETs with STO films. STO protection provides excellent stability in air: devices retain performance after month-long air exposure and resist degradation under 100 °C thermal/electrical stress.

Only a short abstract or summary was supplied by the source.

Source: crossref · Quality: short

Research context

Electronic materials

OpenAlex topics: Electronic and Structural Properties of Oxides · Ferroelectric and Negative Capacitance Devices · 2D Materials and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore

Academy for Advanced Interdisciplinary Science and Technology, University of Science and Technology Beijing, Beijing, China,

Faculty of Material Science and Engineering, Kunming University of Science and Technology, Kunming, China

School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, Singapore,

Funding

Ministry of Education - Singapore

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