Semi-insulating 4H-SiC based PIN photodiodes for X-ray detection
Source abstract
Abstract
A semi-insulating 4H-SiC PIN photodetector was developed by employing organic semiconductors to replace conventional doped layers. The device achieves remarkable X-ray and strong UV sensitivity, and showed excellent long-term stability.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: Ga2O3 and related materials · Silicon Carbide Semiconductor Technologies · Thin-Film Transistor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
Wuhan University Shenzhen Research Institute, Shenzhen, 518057, P. R. China
Micius Laboratory, Zhengzhou, 450001, P. R. China
School of Electrical and Information Engineering, Hubei University of Science and Technology, Xianning, 437100, P. R. China
Funding
National Natural Science Foundation of China · Basic and Applied Basic Research Foundation of Guangdong Province
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