Solution-processed antimony-doped IGZTO thin-film transistors exhibiting superior operational stability under extreme environmental conditions
Source abstract
Abstract
By introducing Sb into IGZTO TFTs, it exhibits improved electrical performance and various bias stability under extreme conditions.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: Thin-Film Transistor Technologies · Electrical and Thermal Properties of Materials · Transition Metal Oxide Nanomaterials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Nano Convergence Materials Center, Korea Institute of Ceramic Engineering and Technology (KICET), Soho-ro, Jinju 52851, Gyeongsangnam-do, Republic of Korea
Department of Materials Science and Electronics Engineering, Pusan National University, Busan 46241, Republic of Korea
Funding
National Research Foundation of Korea · Korea Institute of Ceramic Engineering and Technology · Ministry of Trade, Industry and Energy
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