A silicon-based InGaN/GaN microbelt blue light-emitting-diode fabricated via low-temperature direct bonding
Source abstract
Abstract
Integrating a nitride semiconductor light source on Si is a key to building wide-spectrum photonic systems; however, there have been many challenges to growing nitride semiconductors directly on a Si substrate.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · Semiconductor Quantum Structures and Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, China
School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
Institute of Semiconductor, Guangdong Academy of Sciences, Guangzhou 510631, China
Funding
Basic and Applied Basic Research Foundation of Guangdong Province · National Key Research and Development Program of China · National Natural Science Foundation of China
References (41)
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