Guiding charge injection in Schottky-barrier transistors through the spatial Fermi-level gradients of heterogeneous bimetallic systems
Source abstract
Abstract
A heterogeneous bimetallic system, composed of two metallic thin films with inherently different Fermi levels, is potentially usable for the fine tuning of interfacial charge dynamics.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: Semiconductor materials and devices · Semiconductor materials and interfaces · Thin-Film Transistor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Creative Convergence Engineering, Hanbat National University, Daejeon 34158, Republic of Korea
School of Electronic Engineering, Gachon University, Seongnam 13120, Republic of Korea
Research Institute of Printed Electronics & 3D Printing, Industry University Cooperation Foundation, Hanbat National University, Daejeon 34158, Republic of Korea
Funding
National Research Foundation of Korea
References (38)
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