Single-layer HfN ₂ : symmetric scaling behavior in CMOS transistors

Abstract

Research context

OpenAlex topics: Ferroelectric and Negative Capacitance Devices · MXene and MAX Phase Materials · Semiconductor materials and devices

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Affiliations

Hunan Key Laboratory for Micro–Nano Energy Materials and Devices, School of Physics and Optoelectronics, Xiangtan University, Xiangtan 411105, China

National Center for Applied Mathematics in Hunan, Xiangtan University, Xiangtan 411105, China

State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China

Funding

Natural Science Foundation of Hunan Province

References (48)